As the development of electrical and electronic technology , there should be an extensive prospect of schottky barrier diode with its merits of high response frequency and low power consumption 随着电力电子技术的蓬勃发展，肖特基二极管的高频、低功耗等优良性能将为其赢得广阔的发展前景。
Schottly barrier diode can be used as rectifying and continuous - flow unit in high frequency rectifying , switching and holding circuit , yet reducing the power consumption and circuit noise , enhancing the circuit efficiency and operation frequency 肖特基二极管在高频整流、开关电路和保护电路中作为整流和续流元件，可以大幅度降低功耗，提高电路效率和使用频率，减少电路噪声。
Schottky barrier diode is a kind of majority carrier device , using the contact barrier formed between metal and semiconductor to work . it has the advantages of low turn - on voltage and high response frequency , compared with pn junction diodes 肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件，与普通的pn结二极管相比，它具有正向导通电压低，响应速度快等优良特性。
In this paper , we first presented a comprehensive review of the research history and current status of gan material preparation and characterizations . on the basis of that , we conducted a detailed study of ohmic contact resistivity of metal - gan , and algan - based schottky barrier diode was successfully achieved . in addition , we reported polycrystalline gan epitaxied on silica glass substrates 本论文在系统总结了国内外gan材料制备和器件应用的研究历史和现状的基础上，对金属与n型gan的欧姆接触进行了较细致的研究，计算出接触电阻率，并在此基础上制备了algan基肖特基二极管原型器件，向gan及其合金的微电子器件研究迈出了重要一步。
Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work . in addition , we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic 本文讨论了n型6h - sic欧姆接触的制备工艺及其基本电学及热学特性，并在此基础上采用金属au及ni在n型6h - sic硅面( 0001晶向)上制备了具有一定特性的肖特基势垒二极管。
